Samsung has developed the first meeting of the Hot chips 33 GB DDR5-7200 memory module 512 has announced . Compared to the DDR4 model, this RAM module offers up to 40% higher performance and twice as much capacity at 1.1 volts.
Samsung has built its DDR5-7200 module using eight-stack DDR5 nannies connected using TSV technology. This is a big improvement over DDR4 RAMs, which use four DDR4 nannies. DDR5 stacks are smaller than DDR 4 stacks, despite their higher density (DDR5 stack size is 1 mm and DDR4 stack size is 1.2 mm).
In using the DDR5-7200 modules to reduce the distance between the nannies, Samsung has used techniques based on the use of thin wafers, reducing the height of the stacks by up to 40%. The slimmer design of this RAM module allows it to operate at lower voltages. This module can also operate at a voltage of 1.1 volts, which is only 0.92% of the voltage required by DDR4 RAM.
Samsung DDR5 RAM module uses integrated power management circuit (PMIC) and a high-efficiency voltage regulator, and also uses a high gate dielectric metal gate process, which increases the efficiency of the module. Samsung claims that using PMIC not only reduces voltage consumption, but also reduces processing noise.
Samsung has also introduced the Same-Bank refresh feature SBR in its new modules to increase DRAM bus efficiency by up to 10% higher than DDR4 module bus efficiency. Samsung has also used a new Decision Feedback Equalizer (DEF) to boost its new RAM signal stability. In order to increase the security and reliability of data management, an error correction code has also been created on the Samsung RAM module.
Samsung 512GB RAM module is not made for personal computers and similar systems, and Samsung has developed it for use in servers and data centers.
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