03. 14. 2021 , Gennady Detynich
The Israeli company Weebit Nano, a developer of resistive memory (ReRAM), reported that significant progress has been made in the movement towards mass production of new and promising storage technology. At the experimental facilities of the French institute CEA-Leti, ReRAM arrays were first produced on 489 – mm plates using 14 – nm technical process.
Image Source: Weebit Nano
Previous products of the Weebit and CEA-Leti partnership were ReRAM arrays on 200 – mm plates using 130 – nm process technology … Mastering finer manufacturing processes on larger-diameter wafers is a significant step forward, which allowed the company to claim this as a quantum leap.
Unfortunately, Weebit did not disclose the characteristics arrays. It is claimed to be 1-Mbit resistive memory blocks. In general, mastering the production of ReRAM with technological standards , in relation to Weebit technologies, since ReRAM is being developed in many variants, including the notorious HP memristor).
Let’s add, a pilot production of ReRAM by Weebit Nano within 28 – nm of the technical process was supposed to start at the end 2020 of the year. But then this did not happen, nor did the promised production of ReRAM in South Korea begin at the end 2020 by “one big company.” Instead, a month ago, Weebit signed an agreement to launch ReRAM production as part of 200 – nm process technology at the plant of the American company SkyWater.
Image Source: Weebit Nano
It seems that the Weebit technology does not fit well with advanced manufacturing processes. We hope that moving forward together with French researchers will bring resistive memory technology closer to commercial implementation. ReRAM memory is close to RAM in terms of speed, but at the same time it has non-volatility like flash memory. For the development of the future of electronics, this is the most important factor.
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